Chakraborty, A., Keller, S., Meier, C., Haskell, B. A., Keller, S., Waltereit, P., . . . Mishra, U. K. (2005). Properties of nonpolar a -plane InGaNGaN multiple quantum wells grown on lateral epitaxially overgrown a -plane GaN. Applied Physics Letters, 86(3), 1-3. doi:10.1063/1.1851007

Chen, D. (2020). Materials science in semiconductor processing temperature-dependent electrical and optical studies on nonpolar a-plane GaN thin films with various si-doping levels. Mater.Sci.Semicond.Process., 114, 12. Retrieved from www.scopus.com

Darakchieva, V., Paskov, P. P., Paskova, T., Valcheva, E., Monemar, B., & Heuken, M. (2003). Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy. Applied Physics Letters, 82(5), 703-705. doi:10.1063/1.1542931

Darakchieva, V., Paskova, T., Schubert, M., Arwin, H., Paskov, P. P., Monemar, B., . . . Nakamura, S. (2007). Anisotropic strain and phonon deformation potentials in GaN. Physical Review B - Condensed Matter and Materials Physics, 75(19) doi:10.1103/PhysRevB.75.195217

Hu, X. -., Xiao, F. -., Zhou, Q. -., Zheng, Y. -., & Liu, W. -. (2019). High-luminous efficacy green light-emitting diodes with InGaN/GaN quasi-superlattice interlayer and al-doped indium tin oxide film. Journal of Alloys and Compounds, 794, 137-143. doi:10.1016/j.jallcom.2019.04.241

Jiang, L., Marconcini, P., Hossian, M. S., Qiu, W., Evans, R., Macucci, M., & Skafidas, E. (2017). A tight binding and →k. →p study of monolayer stanene. Scientific Reports, 7(1) doi:10.1038/s41598-017-12281-y

Jinno, D., Otsuki, S., Sugimori, S., Daicho, H., Iwaya, M., Takeuchi, T., . . . Akasaki, I. (2018). Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates. Journal of Crystal Growth, 484, 50-55. doi:10.1016/j.jcrysgro.2017.12.036

Jiu, L., Gong, Y., & Wang, T. (2018). Overgrowth and strain GaN on patterned templates on sapphire. Sci.Rep., 8, 1. Retrieved from www.scopus.com

Jo, M., & Hirayama, H. (2016). Growth of non-polar a-plane AlN on r-plane sapphire. Japanese Journal of Applied Physics, 55(5) doi:10.7567/JJAP.55.05FA02

Kim, D. H., Kim, S. J., Chae, D. J., Yang, J. W., Sim, J. I., Kim, T. G., & Hwang, S. M. (2011). Improved crystal quality and surface morphology of non polar α-plane GaN grown on γ-plane sapphire substrates. Journal of the Korean Physical Society, 58(41), 873-877. doi:10.3938/jkps.58.873

Kim, J. H., Hwang, S. -., Baik, K. H., & Park, J. H. (2014). Effect of basal-plane stacking faults on X-ray diffraction of non-polar (1120) a-plane GaN films grown on (1102) r-plane sapphire substrates. Journal of Semiconductor Technology and Science, 14(5), 557-565. doi:10.5573/JSTS.2014.14.5.557

Konar, A., Verma, A., Fang, T., Zhao, P., Jana, R., & Jena, D. (2012). Charge transport in non-polar and semi-polar III-V nitride heterostructures. Semiconductor Science and Technology, 27(2) doi:10.1088/0268-1242/27/2/024018

Kröger, R. (2008). Defects and interfacial structure of a-plane GaN on r-plane sapphire. Nitrides with nonpolar surfaces: Growth, properties, and devices (pp. 287-318) doi:10.1002/9783527623150.ch11 Retrieved from www.scopus.com

Kuech, T. F., & Redwing, J. M. (1994). Carbon doping in metalorganic vapor phase epitaxy. Journal of Crystal Growth, 145(1-4), 382-389. doi:10.1016/0022-0248(94)91080-4

Laskar, M. R., Ganguli, T., Rahman, A. A., Mukherjee, A., Hatui, N., Gokhale, M. R., & Bhattacharya, A. (2011). Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase al content. Journal of Applied Physics, 109(1) doi:10.1063/1.3525602

Lee, M., Vu, T. K. O., Lee, K. S., Kim, E. K., & Park, S. (2018). Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE. Scientific Reports, 8(1) doi:10.1038/s41598-018-26290-y

Li, P. P., Zhao, Y. B., Li, H. J., Che, J. M., Zhang, Z. -., Li, Z. C., . . . Wang, G. H. (2018). Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD. Optics Express, 26(25), 33108-33115. doi:10.1364/OE.26.033108

Li, Z. L., Lai, P. T., & Choi, H. W. (2010). Reliability study on green InGaN/GaN light emitting diodes. Paper presented at the Journal of Physics: Conference Series, , 209 doi:10.1088/1742-6596/209/1/012065 Retrieved from www.scopus.com

Liang, F., Zhao, D., Jiang, D., Liu, Z., Zhu, J., Chen, P., . . . Du, G. (2018). Carbon-related defects as a source for the enhancement of yellow luminescence of unintentionally doped GaN. Nanomaterials, 8(9) doi:10.3390/nano8090744

Lotsari, A., Kehagias, T., Tsiakatouras, G., Tsagaraki, K., Katsikini, M., Arvanitidis, J., . . . Dimitrakopulos, G. P. (2014). Structural anisotropic properties of a -plane GaN epilayers grown on r -plane sapphire by molecular beam epitaxy. Journal of Applied Physics, 115(21) doi:10.1063/1.4880957

McLaurin, M. B., Hirai, A., Young, E., Wu, F., & Speck, J. S. (2008). Basal plane stacking-fault related anisotropy in X-ray rocking curve widths of m-plane GaN. Japanese Journal of Applied Physics, 47(7 PART 1), 5429-5431. doi:10.1143/JJAP.47.5429

Moram, M. A., Johnston, C. F., Hollander, J. L., Kappers, M. J., & Humphreys, C. J. (2009). Understanding x-ray diffraction of nonpolar gallium nitride films. Journal of Applied Physics, 105(11) doi:10.1063/1.3129307

Moram, M. A., Johnston, C. F., Kappers, M. J., & Humphreys, C. J. (2009). The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films. Journal of Physics D: Applied Physics, 42(13) doi:10.1088/0022-3727/42/13/135407

Ni, X., Özgür, Ü., Fu, Y., Biyikli, N., Xie, J., Baski, A. A., . . . Liliental-Weber, Z. (2006). Defect reduction in (11 2-0) a -plane GaN by two-stage epitaxial lateral overgrowth. Applied Physics Letters, 89(26) doi:10.1063/1.2423328

Ni, Y. (2015). Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-si (111) system. Jpn.J.Appl.Phys., 54, 10. Retrieved from www.scopus.com

Oehler, F., Sutherland, D., Zhu, T., Emery, R., Badcock, T. J., Kappers, M. J., . . . Oliver, R. A. (2014). Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GAN on sapphire by MOVPE. Journal of Crystal Growth, 408, 32-41. doi:10.1016/j.jcrysgro.2014.09.009

Okada, N., Kashihara, H., Sugimoto, K., Yamada, Y., & Tadatomo, K. (2015). Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes. Journal of Applied Physics, 117(2) doi:10.1063/1.4905914

Omar, A. -., Shuhaimi Bin Abu Bakar, A., Makinudin, A. H. A., Khudus, M. I. M. A., Azman, A., Kamarundzaman, A., & Supangat, A. (2018). Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD. Superlattices and Microstructures, 117, 207-214. doi:10.1016/j.spmi.2018.03.038

Reshchikov, M. A., & Morko̧, H. (2005). Luminescence properties of defects in GaN. Journal of Applied Physics, 97(6) doi:10.1063/1.1868059

Roder, C., Einfeldt, S., Figge, S., Paskova, T., Hommel, D., Paskov, P. P., . . . Nakamura, S. (2006). Stress and wafer bending of a -plane GaN layers on r -plane sapphire substrates. Journal of Applied Physics, 100(10) doi:10.1063/1.2386940

Santana, G., de Melo, O., Aguilar-Hernández, J., Mendoza-Pérez, R., Marel Monroy, B., Escamilla-Esquivel, A., . . . Contreras-Puente, G. (2013). Photoluminescence study of gallium nitride thin films obtained by infrared close space vapor transport. Materials, 6(3), 1050-1060. doi:10.3390/ma6031050

Sarzyński, M., Grzanka, E., Grzanka, S., Targowski, G., Czernecki, R., Reszka, A., . . . Leszczyński, M. (2019). Indium incorporation into InGaN quantum wells grown on GaN narrow stripes. Materials, 12(16) doi:10.3390/ma12162583

Seo, Y. G., Baik, K. H., Song, H., Son, J. -., Oh, K., & Hwang, S. -. (2011). Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates. Optics Express, 19(14), 12919-12924. doi:10.1364/OE.19.012919

Seo, Y. G., Kim, J., Hwang, S. -., Kim, J., Jang, S., Kim, H., & Baik, K. H. (2015). Lattice distortion analysis of nonpolar a-plane $$(11\bar 20)$$ GaN films by using a grazing-incidence X-ray diffraction technique. Journal of the Korean Physical Society, 66(4), 607-611. doi:10.3938/jkps.66.607

Shockley, W., & Read, W. T. (1952). Statistics of the recombinations of holes and electrons. Physical Review, 87(5), 835-842. doi:10.1103/PhysRev.87.835

Son, J. -., Honda, Y., & Amano, H. (2014). Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching. Optics Express, 22(3), 3585-3592. doi:10.1364/OE.22.003585

Song, H., Suh, J., Kyu Kim, E., Hyeon Baik, K., & Hwang, S. -. (2010). Growth of high quality a-plane GaN epi-layer on r-plane sapphire substrates with optimization of multi-buffer layer. Journal of Crystal Growth, 312(21), 3122-3126. doi:10.1016/j.jcrysgro.2010.08.004

Sugahara, T., Sato, H., Hao, M., Naoi, Y., Kurai, S., Tottori, S., . . . Sakai, S. (1998). Direct evidence that dislocations are non-radiative recombination centers in GaN. Japanese Journal of Applied Physics, 37(4A), L398-L400. doi:10.1143/jjap.37.l398

Sun, Z., Song, P., Nitta, S., Honda, Y., & Amano, H. (2017). A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer. Journal of Crystal Growth, 468, 866-869. doi:10.1016/j.jcrysgro.2017.01.031

Tao, H., Xu, S., Mao, W., Fan, X., Du, J., Peng, R., . . . Hao, Y. (2019). Improved crystal quality of nonpolar a-plane GaN based on the nano pattern formed by the annealed thin ni layer. Superlattices and Microstructures, 130, 539-544. doi:10.1016/j.spmi.2019.05.020

Tung, L. T., Lin, L., Chang, Y., Huang, C., Hsiao, L., & Chiang, H. (2009). Photoluminescence and raman studies of GaN films grown by MOCVD. Journal of Physics: Conference Series, 187 doi:10.1088/1742-6596/187/1/012021

Wang, C., Jiang, Y., Die, J., Yan, S., Hu, X., Hu, W., . . . Chen, H. (2019). Improved crystal quality of non-polar: A -plane GaN epi-layers directly grown on optimized hole-array patterned r -sapphire substrates. CrystEngComm, 21(17), 2747-2753. doi:10.1039/c8ce01988f

Xu, S., Hao, Y., Duan, H., Zhang, J., Zhang, J., Zhou, X., . . . Ni, J. (2009). Surface morphology of [112̄0] a-plane GaN growth by MOCVD on [11̄02] r-plane sapphire. Journal of Semiconductors, 30(4) doi:10.1088/1674-4926/30/4/043003

Yamada, H., Iso, K., Saito, M., Fujito, K., DenBaars, S. P., Speck, J. S., & Nakamura, S. (2007). Impact of substrate miscut on the characteristic of m-plane InGaN/GaN light emitting diodes. Japanese Journal of Applied Physics, Part 2: Letters, 46(45-49), L1117-L1119. doi:10.1143/JJAP.46.L1117

Yamamoto, S., Zhao, Y., Pan, C. -., Chung, R. B., Fujito, K., Sonoda, J., . . . Nakamura, S. (2010). High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20̄21) GaN substrates. Applied Physics Express, 3(12) doi:10.1143/APEX.3.122102

Yan, J., Wang, J., Liu, N., Liu, Z., Ruan, J., & Li, J. (2009). High quality AlGaN grown on a high temperature AIN template by MOCVD. Journal of Semiconductors, 30(10) doi:10.1088/1674-4926/30/10/103001

Yan, S., Die, J., Wang, C., Hu, X., Ma, Z., Deng, Z., . . . Chen, H. (2019). Improvement in the crystal quality of non-polar: A-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate. CrystEngComm, 21(34), 5124-5128. doi:10.1039/c9ce00995g

Yonenaga, I., Ohno, Y., Taishi, T., Tokumoto, Y., Makino, H., Yao, T., . . . Edagawa, K. (2011). Optical properties of fresh dislocations in GaN. Journal of Crystal Growth, 318(1), 415-417. doi:10.1016/j.jcrysgro.2010.10.060

Yu, H., Ozturk, M., Demirel, P., Cakmak, H., & Ozbay, E. (2010). MOCVD growth and optical properties of non-polar (1 12 0) a-plane GaN on (1 01 2) r-plane sapphire substrate. Journal of Crystal Growth, 312(23), 3438-3442. doi:10.1016/j.jcrysgro.2010.08.052

Zhang, J., Tian, W., Wu, F., Wan, Q., Wang, Z., Zhang, J., . . . Li, X. (2014). The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition. Applied Surface Science, 307, 525-532. doi:10.1016/j.apsusc.2014.04.069

Zhao, G., Wang, L., Yang, S., Li, H., Wei, H., Han, D., & Wang, Z. (2016). Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers. Scientific Reports, 6 doi:10.1038/srep20787

Zhong, H., Zhang, C., Song, W., Chen, K., Sheng, Y., Xu, G., & Liu, Z. (2020). Surface morphology of polar, semipolar and nonpolar freestanding GaN after chemical etching. Applied Surface Science, 511 doi:10.1016/j.apsusc.2020.145524