UPSI Digital Repository (UDRep)
|
![]() |
|
|
Abstract : Perpustakaan Tuanku Bainun |
Semiconductor materials play a crucial role in the development of optoelectronics and power devices. However, their evaluation and selection pose a multi-attribute decision-making problem. This problem encompasses various considerations, such as multiple evaluation criteria, data variation, and the importance of criteria multiplicity. Therefore, this study proposes an integrated fuzzy multi-measurement decision-making model (IFMMDMM) to evaluate and select optimization techniques for semi-polar III-V semiconductor materials. The research methodology is designed based on three sequential phases. Firstly, four optimization techniques for semi-polar III-V semiconductor materials and four evaluation criteria are identified to construct the evaluation decision matrix. Secondly, the fuzzy-weighted zero-inconsistency method is developed to evaluate and assign weights to the defined multi-measurement criteria. Thirdly, the fuzzy decision by opinion score method is developed to select the optimization techniques for semi-polar III-V semiconductor materials. The weighting results reveal that the highest weight value was assigned to ‘root mean square under surface morphology’ (0.1382), while ‘peak-to-valley under surface morphology’ received the lowest weight value (0.1074). The selection results indicated that ‘different flux with fixed cycle NH3 treatment (D)’ ranked first, whereas ‘NH3 flux at changing V/III (A)’ had the lowest performance order. Systematic and sensitivity ranking assessments were performed to verify the efficiency of the proposed model. © 2023 Elsevier Ltd. |
References |
A.H. Ahmad Makinudin et al. (2021) Impact of crystallinity towards the performance of semi-polar (11–22) GaN UV photodetector Materials Letters. A. Anuar et al. (2020) Crystal quality and surface structure tuning of semi-polar (11–22) GaN on m-plane sapphire via in-situ multiple ammonia treatment Thin Solid Films. A. Anuar et al. (2020) Growth of semi-polar (112¯ 2) GaN on m-plane sapphire via In-Situ Multiple Ammonia Treatment (I-SMAT) method Vacuum. A. Azman et al. (2021) The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition Materials Science in Semiconductor Processing . M.A. Johar et al. (2020) Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template [Article] Nanoscale Advances. A. Kamarudzaman et al. (2020) Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN Materials Science in Semiconductor Processing. S. Nădăban et al. (2016) Fuzzy TOPSIS: A general view Procedia Computer Science. A.-Z. Omar et al. (2021) Enhanced indium adsorption and surface evolution of semi-polar (11–22) LED via a strain periodic alternating superlattice (SPAS-L) Materials Today Communications. A.Z. Omar et al. (2018) Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD Superlattices and Microstructures. A.Z. Omar et al. (2018) Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire Materials Science in Semiconductor Processing. M.M. Salih et al. (2020) Fuzzy decision by opinion score method Applied Soft Computing. M.M. Salih et al. (2020) Fuzzy decision by opinion score method Applied Soft Computing. F. Tendille et al. (2014) Defect reduction method in (11–22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults Journal of Crystal Growth. S. Xu et al. (2012) Improvements in (112̅2) semipolar GaN crystal quality by graded superlattices Thin Solid Films. H. Yang et al. (2016) Effects of Si-doping on structural, electrical, and optical properties of polar and non-polar AlGaN epi-layers Superlattices and Microstructures. |
This material may be protected under Copyright Act which governs the making of photocopies or reproductions of copyrighted materials. You may use the digitized material for private study, scholarship, or research. |