|
UPSI Digital Repository (UDRep)
|
|
|
|
||||||||||||||||||||||||||||
| Abstract : Perpustakaan Tuanku Bainun |
| Low-frequency noise measurement is a scientific technique which is capable of probing down to localized microscopic phenomena of electron devices. It can be used as a diagnostic tool in application concerning the reliability of electron devices. In this research, a low-frequency noise measurement (LFNM) setup to measure 1/f noise is designed, developed and validated. The measurement setup consists of a biasing circuit, a transimpedance amplifier and a dynamic signal analyzer. Two metal boxes were used to shield the setup from signal interference. A LabView-based program is developed to extract the noise power spectral density data from the dynamic signal analyzer for further analysis. Validation of the measurement setup was made by measuring the thermal noise of two standard resistors. The obtained results were similar to the theoretical values.
Keywords low-frequency noise measurement, 1/f noise, noise power spectral density |
| References |
Aveek, B., Achyut, B. and Raychaudhuri, A.K. (2005). 1/f noise in nanowires, Nanotechnology, 17(1): 152-156.
Butler, Z.C. and Hsiang, T.Y. (1987). Spectral dependence of 1/f noise on gate bias in N-MOSFET’s, Solid-State Electronics, 30(2): 419.
Ciofi, C. and Neri, B. (2000). Low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices, J. Phys. D: Appl. Phys., 33(21): 199-216.
Gunes, M., Johanson, R.E. and Kasap, S.O. (1999). 1/f-noise study of undoped intrinsic hydrogenated amorphous silicon thin films, Phys. Rev. B. 60(3): 1477-1479.
Hooge, F.N., Kleinpenning, T.G.M. and Vandamme, L.K.J. (1981). Experimental studies on 1/f noise, Rep. Prog. Phys., 44: 479-532.
Hsu, S.T. (1970). Surface state related 1/f noise in MOS transistors, Solid-state electronics, 13(11): 1451-1459.
Jang, S.L. and Wu, J.Y. (1993). Low-frequency current and intensity noise in AlGaAs laser diodes, Solid- State Electronics, 36(2): 189-196.
Kleinpenning, T.G.M. (1985). 1/f noise in p-n junction diodes, Jurnal of Vacuum Science & Technology A, 3: 176-182.
Kogan, S.H. (1996). Electronic noise and fluctuations in solids, Cambridge: Cambridge University Press.
Martin, S., Dodabalapur, A., Bao, Z., Crone, B., Katz, H.E., Li, W., Passner, A., and Rogers, J.A. (2000). Flicker noise properties of organic thin-film transistors, J. Appl. Phys. 87(7): 3381- 3386.
McWhorter, A.L. (1957). 1/f noise and germanium surface properties, In R. H. Kingston, editor, Semiconductor Surface Physics, 207-228, Philadephia: University of Pennsylvania Press.
Rhayem, J., Rigaud, D., Valenza, M., Szydlo, N., and Lebrun, H. (1998). 1/f Noise in amorphous silicon thin film transistors: effect of scaling down, Solid-State Electronics, 43(4): 713-721.
Rychetský, I., Kamba, S., Porokhonskyy, V., Pashkin, A., Savinov, M., Bovtun, V., Petzelt, J., Kosec, M., and Dressel, M. (2003). Frequency-independent dielectric losses (1/f noise) in PLZT relaxors at low temperatures, Journal of Physics: Condensed Matter, 15(35): 6017-6030.
Sanchez, J.E. and Bosman, G. (2000). Measurements of 1/f noise amplitude modulated by a large-signal carrier in bipolar junction transistors, Microelectronics Reliability, 40(11): 1839-1845.
Smeets, R. M. M., Dekker N. H. and Dekker, C. (2009). Low-frequency noise in solid-state nanopores, Nanotechnology, 20: 095501-095504. |
| This material may be protected under Copyright Act which governs the making of photocopies or reproductions of copyrighted materials. You may use the digitized material for private study, scholarship, or research. |