Ahmad Makinudin, A. H., Al-Zuhairi, O., Anuar, A., Zainorin, M. Z., Abu Bakar, A. S., DenBaars, S., & Supangat, A. (2021). Impact of crystallinity towards the performance of semi-polar (11–22) GaN UV photodetector. Materials Letters, 286 doi:10.1016/j.matlet.2020.129244

Ahmad Makinudin, A. H., Omar, A. -., Anuar, A., Bakar, A. S. A., Denbaars, S. P., & Supangat, A. (2019). Impact of a strained periodic multilayer on the surface and crystal quality of a semipolar (11-22) GaN template. Crystal Growth and Design, 19(11), 6092-6099. doi:10.1021/acs.cgd.9b00206

Anuar, A., Ahmad Makinudin, A. H., Al-Zuhairi, O., Abu Bakar, A. S., & Supangat, A. (2020). Crystal quality and surface structure tuning of semi-polar (11–22) GaN on m-plane sapphire via in-situ multiple ammonia treatment. Thin Solid Films, 697 doi:10.1016/j.tsf.2020.137817

Anuar, A., Ahmad Makinudin, A. H., Al-Zuhairi, O., Chanlek, N., Abu Bakar, A. S., & Supangat, A. (2020). Growth of semi-polar (112¯2) GaN on m-plane sapphire via in-situ multiple ammonia treatment (I-SMAT) method. Vacuum, 174 doi:10.1016/j.vacuum.2020.109208

Azman, A., Kamarundzaman, A., Abu Bakar, A. S., & Abd Majid, W. H. (2021). The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition. Materials Science in Semiconductor Processing, 131 doi:10.1016/j.mssp.2021.105836

Azman, A., Shuhaimi, A., Omar, A. -., Kamarundzaman, A., Khudus, M. I. M. A., Ariff, A., . . . Rahman, S. A. (2018). Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology. Thin Solid Films, 667, 48-54. doi:10.1016/j.tsf.2018.09.052

Bae, S. Y., Lee, D. S., Kong, B. H., Cho, H. K., Kaeding, J. F., Nakamura, S., . . . Speck, J. S. (2011). Electroluminescence enhancement of (112̄2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates. Current Applied Physics, 11(3), 954-958. doi:10.1016/j.cap.2011.01.001

Chen, H. -., Lu, C. -., Yeh, D. -., Huang, C. -., Huang, J. -., & Yang, C. -. (2006). Orange-red light-emitting diodes based on a prestrained ingan-gan quantum-well epitaxy structure. IEEE Photonics Technology Letters, 18(21), 2269-2271. doi:10.1109/LPT.2006.884884

Dasilva, Y. A. R., Chauvat, M. P., Ruterana, P., Lahourcade, L., Monroy, E., & Nataf, G. (2010). Defect structure in heteroepitaxial semipolar (1122) (ga, al)N. Journal of Physics Condensed Matter, 22(35) doi:10.1088/0953-8984/22/35/355802

De Mierry, P., Guehne, T., Nemoz, M., Chenot, S., & Beraudo, E. (2009). Comparison between polar (0001) and semipolar (112̄2) nitride blue-green light-emitting diodes grown on c- and m-plane sapphire substrates. Japanese Journal of Applied Physics, 48(3), 031002. doi:10.1143/JJAP.48.031002

Denton, A. R., & Ashcroft, N. W. (1991). Vegards law. Physical Review A, 43(6), 3161-3164. doi:10.1103/PhysRevA.43.3161

Dinh, D. V., Corbett, B., Parbrook, P. J., Koslow, I. L., Rychetsky, M., Guttmann, M., . . . Weyers, M. (2016). Role of substrate quality on the performance of semipolar (11 2 - 2) InGaN light-emitting diodes. Journal of Applied Physics, 120(13) doi:10.1063/1.4963757

Dinh, D. V., Skuridina, D., Solopow, S., Frentrup, M., Pristovsek, M., Vogt, P., . . . Szczepaska, A. (2012). Growth and characterizations of semipolar (11 2̄2) InN. Journal of Applied Physics, 112(1) doi:10.1063/1.4733997

Funato, M., Ueda, M., Kawakami, Y., Narukawa, Y., Kosugi, T., Takahashi, M., & Mukai, T. (2006). Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates. Japanese Journal of Applied Physics, Part 2: Letters, 45(24-28), L659-L662. doi:10.1143/JJAP.45.L659

Gleize, J., Demangeot, F., Frandon, J., Renucci, M. A., Widmann, F., & Daudin, B. (1999). Phonons in a strained hexagonal GaN-AlN superlattice. Applied Physics Letters, 74(5), 703-705. doi:10.1063/1.122993

Guo, H., Sun, Y., Wang, H., Zeng, X., Xu, K., Zhang, B., & Yang, H. (2019). Optical and spatial resolved cathodoluminescence study of phase separation in green InGaN sandwiched structure grown on GaN nanorods by MOCVD. Materials Today Communications, 20 doi:10.1016/j.mtcomm.2019.100563

Jang, J., Lee, K., Hwang, J., Jung, J., Lee, S., Lee, K., . . . Nam, O. (2012). Improvement of crystal quality and optical property in (11-22) semipolar InGaN/GaN LEDs grown on patterned m-plane sapphire substrate. Journal of Crystal Growth, 361(1), 166-170. doi:10.1016/j.jcrysgro.2012.08.052

Jiang, T., Xu, S., Zhang, J., Li, P., Huang, J., Niu, M., . . . Hao, Y. (2016). Temperature dependence of the raman-active modes in the semipolar (11 2¯2) plane GaN film. Journal of Applied Physics, 120(24) doi:10.1063/1.4972951

Kamarudzaman, A., Abu Bakar, A. S. B., Azman, A., Omar, A. -., Supangat, A., & Talik, N. A. (2020). Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN. Materials Science in Semiconductor Processing, 105 doi:10.1016/j.mssp.2019.104700

Kim, J. H., Hwang, S. -., Baik, K. H., & Park, J. H. (2014). Effect of basal-plane stacking faults on X-ray diffraction of non-polar (1120) a-plane GaN films grown on (1102) r-plane sapphire substrates. Journal of Semiconductor Technology and Science, 14(5), 557-565. doi:10.5573/JSTS.2014.14.5.557

Kriouche, N., Venénguès, P., Nemoz, M., Nataf, G., & De Mierry, P. (2010). Stacking faults blocking process in (1 1 -2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy. Journal of Crystal Growth, 312(19), 2625-2630. doi:10.1016/j.jcrysgro.2010.05.038

Lazarev, S., Bauer, S., Meisch, T., Bauer, M., Tischer, I., Barchuk, M., . . . Baumbach, T. (2013). Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (112 2) GaN layers grown from the sidewall of an r-patterned sapphire substrate. Journal of Applied Crystallography, 46(5), 1425-1433. doi:10.1107/S0021889813020438

Lee, D. -., Jang, J. -., Kong, B. -., Cho, H. -., & Nam, O. (2010). Regrowth of semipolar GaN on nanoporous GaN template by metal organic chemical vapor deposition. Japanese Journal of Applied Physics, 49(5 PART 1), 0580011-0580012. doi:10.1143/JJAP.49.058001

Lee, J. -., Han, S. -., Song, K. -., & Lee, S. -. (2014). Optical and electrical improvements of semipolar (1 1 -2 2) GaN-based light emitting diodes by si doping of n-GaN template. Journal of Alloys and Compounds, 598, 85-88. doi:10.1016/j.jallcom.2014.02.031

Li, H., Xiang, H., Huang, H., Zeng, Z., & Peng, X. (2020). Interface structure and deformation mechanisms of AlN/GaN multilayers. Ceramics International, 46(8), 11556-11562. doi:10.1016/j.ceramint.2020.01.182

Li, P., Li, H., Li, Z., Kang, J., Yi, X., Li, J., & Wang, G. (2015). Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes. Journal of Applied Physics, 117(7) doi:10.1063/1.4906960

Lin, D. -., Lee, C. -., Liu, C. -., Han, H. -., Lan, Y. -., Lin, C. -., . . . Kuo, H. -. (2012). Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks. Applied Physics Letters, 101(23) doi:10.1063/1.4768950

Liu, J., Jia, Z., Ma, S., Dong, H., Zhai, G., & Xu, B. (2018). Enhancement of carrier localization effect and internal quantum efficiency through in-rich InGaN quantum dots. Superlattices and Microstructures, 113, 497-501. doi:10.1016/j.spmi.2017.11.026

Makinudin, A. H. A., Omar, A. -., Bakar, A. S. A., Anuar, A., & Supangat, A. (2021). Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties. Thin Solid Films, 720 doi:10.1016/j.tsf.2020.138489

Masui, H., Nakamura, S., DenBaars, S. P., & Mishra, U. K. (2010). Nonpolar and semipolar III-nitride light-emitting diodes: Achievements and challenges. IEEE Transactions on Electron Devices, 57(1), 88-100. doi:10.1109/TED.2009.2033773

McLaurin, M. B., Hirai, A., Young, E., Wu, F., & Speck, J. S. (2008). Basal plane stacking-fault related anisotropy in X-ray rocking curve widths of m-plane GaN. Japanese Journal of Applied Physics, 47(7 PART 1), 5429-5431. doi:10.1143/JJAP.47.5429

Mogilatenko, A., Kirmse, H., Stellmach, J., Frentrup, M., Mehnke, F., Wernicke, T., . . . Weyers, M. (2014). Analysis of crystal orientation in AlN layers grown on m-plane sapphire. Journal of Crystal Growth, 400, 54-60. doi:10.1016/j.jcrysgro.2014.04.014

Monavarian, M., Izyumskaya, N., Müller, M., Metzner, S., Veit, P., Can, N., . . . Avrutin, V. (2016). Improvement of optical quality of semipolar (1122) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth. Journal of Applied Physics, 119(14) doi:10.1063/1.4945770

Monavarian, M., Metzner, S., Izyumskaya, N., Okur, S., Zhang, F., Can, N., . . . Morkoç, H. (2015). Indium-incorporation efficiency in semipolar (1122) oriented InGaN-based light emitting diodes. Paper presented at the Proceedings of SPIE - the International Society for Optical Engineering, , 9363 doi:10.1117/12.2080325 Retrieved from www.scopus.com

Moram, M. A., Johnston, C. F., Hollander, J. L., Kappers, M. J., & Humphreys, C. J. (2009). Understanding x-ray diffraction of nonpolar gallium nitride films. Journal of Applied Physics, 105(11) doi:10.1063/1.3129307

Moram, M. A., & Vickers, M. E. (2009). X-ray diffraction of III-nitrides. Reports on Progress in Physics, 72(3) doi:10.1088/0034-4885/72/3/036502

Moret, M., Gil, B., Ruffenach, S., Briot, O., Giesen, C., Heuken, M., . . . Succi, M. (2009). Optical, structural investigations and band-gap bowing parameter of GaInN alloys. Journal of Crystal Growth, 311(10), 2795-2797. doi:10.1016/j.jcrysgro.2009.01.009

Morko̧, H. (2008). Handbook of Nitride Semiconductors and Devices, Retrieved from www.scopus.com

Moses, P. G., Miao, M., Yan, Q., & Van De Walle, C. G. (2011). Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN. Journal of Chemical Physics, 134(8) doi:10.1063/1.3548872

Mu, Q., Xu, M., Wang, X., Wang, Q., Lv, Y., Feng, Z., . . . Ji, Z. (2016). Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells. Physica E: Low-Dimensional Systems and Nanostructures, 76, 1-5. doi:10.1016/j.physe.2015.10.010

Mukundan, S., Mohan, L., Chandan, G., Roul, B., & Krupanidhi, S. B. (2014). Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy. Journal of Applied Physics, 116(20) doi:10.1063/1.4902892

Nakamura, S. (1998). The roles of structural imperfections in InGaN-based blue light- emitting diodes and laser diodes. Science, 281(5379), 956-961. doi:10.1126/science.281.5379.956

Nakamura, S., Senoh, M., & Mukai, T. (1993). High-power InGaN/GaN double-heterostructure violet light emitting diodes. Applied Physics Letters, 62(19), 2390-2392. doi:10.1063/1.109374

Narukawa, Y., Ichikawa, M., Sanga, D., Sano, M., & Mukai, T. (2010). White light emitting diodes with super-high luminous efficacy. Journal of Physics D: Applied Physics, 43(35) doi:10.1088/0022-3727/43/35/354002

Northrup, J. E. (2009). GaN and InGaN (1122) surfaces: Group-III adlayers and indium incorporation. Applied Physics Letters, 95(13) doi:10.1063/1.3240401

Oh, D. -., Jang, J. -., Nam, O., Song, K. -., & Lee, S. -. (2011). Study of green light-emitting diodes grown on semipolar (1122) GaN/m-sapphire with different crystal qualities. Journal of Crystal Growth, 326(1), 33-36. doi:10.1016/j.jcrysgro.2011.01.046

Omar, A. -., Shuhaimi Bin Abu Bakar, A., Makinudin, A. H. A., Khudus, M. I. M. A., Azman, A., Kamarundzaman, A., & Supangat, A. (2018). Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD. Superlattices and Microstructures, 117, 207-214. doi:10.1016/j.spmi.2018.03.038

Omar, A. -., Shuhaimi, A., Makinudin, A. H. A., Abdul Khudus, M. I. M., & Supangat, A. (2018). Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire. Materials Science in Semiconductor Processing, 86, 1-7. doi:10.1016/j.mssp.2018.06.014

Pereira, S., Correia, M. R., Monteiro, T., Pereira, E., Alves, E., Sequeira, A. D., & Franco, N. (2001). Compositional dependence of the strain-free optical band gap in InxGa1 - xN layers. Applied Physics Letters, 78(15), 2137-2139. doi:10.1063/1.1358368

Ploch, S., Wernicke, T., Dinh, D. V., Pristovsek, M., & Kneissl, M. (2012). Surface diffusion and layer morphology of ((112̄2)) GaN grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 111(3) doi:10.1063/1.3682513

Romanov, A. E., Baker, T. J., Nakamura, S., & Speck, J. S. (2006). Strain-induced polarization in wurtzite III-nitride semipolar layers. Journal of Applied Physics, 100(2) doi:10.1063/1.2218385

Rosales, D., Gil, B., Bretagnon, T., Guizal, B., Izyumskaya, N., Monavarian, M., . . . Morkoç, H. (2014). Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells. Journal of Applied Physics, 116(9) doi:10.1063/1.4894513

Ryou, J. -., Yoder, P. D., Liu, J., Lochner, Z., Kim, H. S., Choi, S., . . . Dupuis, R. D. (2009). Control of quantum-confined stark effect in InGaN-based quantum wells. IEEE Journal on Selected Topics in Quantum Electronics, 15(4), 1080-1091. doi:10.1109/JSTQE.2009.2014170

Sawicka, M., Feduniewicz-Żmuda, A., Kryśko, M., Turski, H., Muziol, G., Siekacz, M., . . . Skierbiszewski, C. (2017). Indium incorporation in semipolar (202̅1) and nonpolar (101̅0) InGaN grown by plasma assisted molecular beam epitaxy. Journal of Crystal Growth, 459, 129-134. doi:10.1016/j.jcrysgro.2016.11.105

Schubert, E. F., & Kim, J. K. (2005). Solid-state light sources getting smart. Science, 308(5726), 1274-1278. doi:10.1126/science.1108712

Sharma, R., Pattison, P. M., Masui, H., Farrell, R. M., Baker, T. J., Haskell, B. A., . . . Nakamura, S. (2005). Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode. Applied Physics Letters, 87(23), 1-3. doi:10.1063/1.2139841

Song, K. -., Oh, D. -., & Lee, S. -. (2013). Optical and crystal improvements of semipolar (11-22) GaN/m-sapphire by in-situ thermal etching process. Current Applied Physics, 13(8), 1643-1646. doi:10.1016/j.cap.2013.05.020

Strittmatter, A., Northrup, J. E., Johnson, N. M., Kisin, M. V., Spiberg, P., El-Ghoroury, H., . . . Syrkin, A. (2011). Semi-polar nitride surfaces and heterostructures. Physica Status Solidi (B) Basic Research, 248(3), 561-573. doi:10.1002/pssb.201046422

Sun, Q., & Han, J. (2012). Heteroepitaxy of nonpolar and semipolar GaN doi:10.1007/978-3-642-23521-4_1 Retrieved from www.scopus.com

Sun, Q., Ko, T. -., Yerino, C. D., Zhang, Y., Lee, I. -., Han, J., . . . Wang, S. -. (2009). Effect of controlled growth dynamics on the microstructure of nonpolar a-plane GaN revealed by X-ray diffraction. Japanese Journal of Applied Physics, 48(7 PART 1) doi:10.1143/JJAP.48.071002

Sun, Q., Leung, B., Yerino, C. D., Zhang, Y., & Han, J. (2009). Improving microstructural quality of semipolar (11 2-2) GaN on m -plane sapphire by a two-step growth process. Applied Physics Letters, 95(23) doi:10.1063/1.3269605

Tyagi, A., Wu, F., Young, E. C., Chakraborty, A., Ohta, H., Bhat, R., . . . Speck, J. S. (2009). Partial strain relaxation via misfit dislocation generation at heterointerfaces in (al,in)GaN epitaxial layers grown on semipolar (11 2̄2) GaN free standing substrates. Applied Physics Letters, 95(25) doi:10.1063/1.3275717

Vennéguès, P., Bougrioua, Z., & Guehne, T. (2007). Microstructural characterization of semipolar GaN templates and epitaxial-lateral-overgrown films deposited on m-plane sapphire by metalorganic vapor phase epitaxy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 46(7 A), 4089-4095. doi:10.1143/JJAP.46.4089

Wang, Q., Zhu, C., Zhou, Y., Wang, X., Liu, B., Wang, X., . . . Ji, Z. (2015). Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDs. Superlattices and Microstructures, 88, 323-329. doi:10.1016/j.spmi.2015.09.028

Wernicke, T., Schade, L., Netzel, C., Rass, J., Hoffmann, V., Ploch, S., . . . Kneissl, M. (2012). Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells. Semiconductor Science and Technology, 27(2) doi:10.1088/0268-1242/27/2/024014

Williamson, G. K., & Hall, W. H. (1953). X-ray line broadening from filed aluminium and wolfram. Acta Metallurgica, 1(1), 22-31. doi:10.1016/0001-6160(53)90006-6

Woo, S., Lee, S., Choi, U., Lee, H., Kim, M., Han, J., & Nam, O. (2016). Novel: In situ self-separation of a 2 in. free-standing m -plane GaN wafer from an m -plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy. CrystEngComm, 18(40), 7690-7695. doi:10.1039/c6ce00642f

Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, H., & Schaff, W. J. (2002). Small band gap bowing in In1-xGaxN alloys. Applied Physics Letters, 80(25), 4741-4743. doi:10.1063/1.1489481

Wu, K. M., Pan, Y., & Liu, C. (2009). InGaN nanorod arrays grown by molecular beam epitaxy: Growth mechanism structural and optical properties. Applied Surface Science, 255(13-14), 6705-6709. doi:10.1016/j.apsusc.2009.02.065

Wu, Z., Shen, X., Liu, C., Li, K., Shen, W., Kang, J., & Fang, Z. (2016). In situ asymmetric island sidewall growth of high-quality semipolar (1122) GaN on m -plane sapphire. CrystEngComm, 18(29), 5440-5447. doi:10.1039/c6ce00878j

Xu, S. R., Zhang, J. C., Cao, Y. R., Zhou, X. W., Xue, J. S., Lin, Z. Y., . . . Hao, Y. (2012). Improvements in (112̄2) semipolar GaN crystal quality by graded superlattices. Thin Solid Films, 520(6), 1909-1912. doi:10.1016/j.tsf.2011.09.049

Yamada, H., Iso, K., Saito, M., Fujito, K., DenBaars, S. P., Speck, J. S., & Nakamura, S. (2007). Impact of substrate miscut on the characteristic of m-plane InGaN/GaN light emitting diodes. Japanese Journal of Applied Physics, Part 2: Letters, 46(45-49), L1117-L1119. doi:10.1143/JJAP.46.L1117

Yamamoto, S., Zhao, Y., Pan, C. -., Chung, R. B., Fujito, K., Sonoda, J., . . . Nakamura, S. (2010). High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20̄21) GaN substrates. Applied Physics Express, 3(12) doi:10.1143/APEX.3.122102

Yan, F., Gao, H., Zhang, H., Wang, G., Yang, F., Yan, J., . . . Li, J. (2007). Temperature dependence of the raman-active modes in the nonpolar a -plane GaN film. Journal of Applied Physics, 101(2) doi:10.1063/1.2424537

Yi, H. -., Song, K. -., Han, S. -., Lee, J. -., & Lee, S. -. (2013). Study of crystallographic tilt and surface morphology on epitaxial lateral overgrown semipolar (11-22) GaN. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 31(6) doi:10.1116/1.4827825

Zhong, H., Zhang, C., Song, W., Chen, K., Sheng, Y., Xu, G., & Liu, Z. (2020). Surface morphology of polar, semipolar and nonpolar freestanding GaN after chemical etching. Applied Surface Science, 511 doi:10.1016/j.apsusc.2020.145524