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Effect of ammonia/gallium ratio and growth temperature towards the surface morphology of semi-polar GaN grown on m-plane sapphire via MOCVD

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Title
Effect of ammonia/gallium ratio and growth temperature towards the surface morphology of semi-polar GaN grown on m-plane sapphire via MOCVD
Type
Article
Main Author
Al-Zuhairi Omar
Additional Authors
  • Abdullah Haaziq Ahmad Makinudin
  • Ahmad Shuhaimi
  • Adreen Azman
  • Anas Kamarundzaman
  • Anis Nazihah Mat Daud
  • Abdullah, Estabraq Talib
Subject
Q Science (General)
Language Code
eng
Bibliographic Details
Place of Production
Tanjong Malim
Publisher
Fakulti Sains dan Matematik
Year of publication
2021
Degree Type
Others
Corporate Name
Universiti Pendidikan Sultan Idris

Abstract

A single-crystalline semi-polar gallium nitride (11-22) was grown on m-plane (10-10) sapphire substrate by metal organic chemical vapor deposition. Three-step approach was introduced to investigate the grain size evolution for semi-polar (11-22) GaN. Such approach was achieved due to the optimized gallium to ammonia ratio and temperature variations, which led to high quality (11-22) oriented gallium nitride epilayers. The full width at half maximum values along (-1-123) and (1-100) planes for the overgrowth temperature of 1080°C were found to be as low as 0.37° and 0.49°, respectively. This was an indication of the enhanced coalescence and reduction in root mean square roughness as seen by atomic force microscopy. Surface analysis via atomic force microscopy indicated the orientation towards semi-polar plane. Field emission scanning electron microscopy analysis further indicates that higher temperature of 1080°C during the deposition of the overgrowth promoted closely packed surface coalescence. Room temperature Raman revealed that the overgrowth temperature of 1080°C portrayed compressive strain free as compared to other overgrowth temperature. Based on these results, the promising overgrowth temperature of 1080°C can be further utilized in future work for optoelectronics devices.  

References

[1] Q.S. Paduano, D.W. Weyburne, D.H. Tomich, Growth and properties of m-plane GaN on m-plane sapphire by metal organic chemical vapor deposition, Journal of Crystal Growth, 367 (2013) 104-109.

[2] J.-H. Lee, S.-H. Han, K.-R. Song, S.-N. Lee, Optical and electrical improvements of semipolar (11− 22) GaNbased light emitting diodes by Si doping of n-GaN template, Journal of Alloys and Compounds, 598 (2014) 85-88.

[3] A. Kamarudzaman, A.S.B.A. Bakar, A. Azman, A.-Z. Omar, A. Supangat, N.A. Talik, Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN, Materials Science in Semiconductor Processing, 105 (2020) 104700.

[4] J. Jang, K. Lee, J. Hwang, J. Jung, S. Lee, K. Lee, B. Kong, H. Cho, O. Nam, Improvement of crystal quality and optical property in (11− 22) semipolar InGaN/GaN LEDs grown on patterned m-plane sapphire substrate, Journal of Crystal Growth, 361 (2012) 166-170.

[5] S. Ploch, M. Frentrup, T. Wernicke, M. Pristovsek, M. Weyers, M. Kneissl, Orientation control of GaN and grown on sapphire by metal-organic vapor phase epitaxy, Journal of Crystal Growth, 312 (2010) 2171-2174.

[6] F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, M. Teisseire, Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults, Journal of Crystal Growth, 404 (2014) 177-183.

[7] P. Waltereit, O. Brandt, A. Trampert, H. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K. Ploog, Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes, Nature, 406 (2000) 865-868.

[8] A. Anuar, A.H.A. Makinudin, O. Al-Zuhairi, N. Chanlek, A.S.A. Bakar, A. Supangat, Growth of Semi-Polar (112¯2) GaN on m-plane Sapphire via In-Situ Multiple Ammonia Treatment (I-SMAT) Method, Vacuum, (2020) 109208.

[9] Y. Won, B. So, S. Woo, D. Lee, M. Kim, K. Nam, S. Im, K.B. Shim, O. Nam, Effect of nitridation on the orientation of GaN layer grown on m-sapphire substrates using hydride vapor phase epitaxy, Journal of Ceramic Processing Research, 15 (2014) 61-65.

[10] A.H.A. Makinudin, O. Al-Zuhairi, A. Anuar, M.Z. Zainorin, A.S.A. Bakar, S. DenBaars, A. Supangat, Impact of Crystallinity Towards the Performance of Semi-Polar (11-22) GaN UV Photodetector, Materials Letters, (2020) 129244.

[11] Z. Wu, A. Fischer, F. Ponce, B. Bastek, J. Christen, T. Wernicke, M. Weyers, M. Kneissl, Structural and optical properties of nonpolar GaN thin films, Applied Physics Letters, 92 (2008) 171904.

[12] T. Wei, Q. Hu, R. Duan, X. Wei, Z. Huo, J. Wang, Y. Zeng, G. Wang, J. Li, Growth of (101¯ 3¯) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy, Journal of Crystal Growth, 311 (2009) 4153-4157.

[13] F. Scholz, Semipolar GaN grown on foreign substrates: a review, Semiconductor Science and technology, 27 (2012) 024002.

[14] A. Azman, A. Shuhaimi, A.-Z. Omar, A. Kamarundzaman, M.I.M.A. Khudus, A. Ariff, M. Samsudin, N. Zainal, S. Abd Rahman, Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology, Thin Solid Films, 667 (2018) 48-54.

[15] M. Araki, N. Mochimizo, K. Hoshino, K. Tadatomo, Direct growth of a-plane GaN on r-plane sapphire substrate by metalorganic vapor phase epitaxy, Japanese Journal of Applied Physics, 46 (2007) 555.

[16] T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, M.Kneissl, Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells, Semiconductor science and technology, 27 (2012) 024014.

[17] A.-Z. Omar, A.S.B.A. Bakar, A.H.A. Makinudin, M.I.M.A. Khudus, A. Azman, A. Kamarundzaman, A. Supangat, Effect of low NH 3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD, Superlattices and Microstructures, (2018).

[18] T.J. Baker, B.A. Haskell, F. Wu, P.T. Fini, J.S. Speck, S. Nakamura, Characterization of planar semipolar gallium nitride films on spinel substrates, Japanese journal of applied physics, 44 (2005) L920.

[19] N.P. Hylton, P. Dawson, C.F. Johnston, M.J. Kappers, J.L. Hollander, C. McAleese, C.J. Humphreys, Optical and microstructural properties of semi‐polar (11‐22) InGaN/GaN quantum well structures, physica status solidi (c), 6 (2009) S727-S730.

[20] K.-R. Song, D.-S. Oh, S.-N. Lee, Optical and crystal improvements of semipolar (11-22) GaN/m-sapphire by insitu thermal etching process, Current Applied Physics, 13 (2013) 1643-1646.

[21] T. Wernicke, C. Netzel, M. Weyers, M. Kneissl, Semipolar GaN grown on m‐plane sapphire using MOVPE, physica status solidi (c), 5 (2008) 1815-1817.

[22] Q. Sun, J. Han, Heteroepitaxy of nonpolar and semipolar GaN, in: GaN and ZnO-based Materials and Devices, Springer, 2012, pp. 1-27.

[23] Q. Zheng, R. Reddy, Mechanism of in situ formation of AlN in Al melt using nitrogen gas, Journal of materials science, 39 (2004) 141-149.

[24] F. Yan, H. Gao, H. Zhang, G. Wang, F. Yang, J. Yan, J. Wang, Y. Zeng, J. Li, Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film, Journal of applied physics, 101 (2007) 3506.

[25] S. Mukundan, L. Mohan, G. Chandan, B. Roul, S. Krupanidhi, Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy, Journal of Applied Physics, 116 (2014) 204502.

[26] T.S. Krishna, N. Aggarwal, G.A. Reddy, P. Dugar, M. Mishra, L. Goswami, N. Dilawar, M. Kumar, K. Maurya, G. Gupta, Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (112 [combining macron] 0) sapphire grown by rf-molecular beam epitaxy, Rsc Advances, 5 (2015) 73261-73267.

[27] A.H.A. Makinudin, A.-Z. Omar, A.S.A. Bakar, A. Anuar, A. Supangat, Disilane Doping of Semi-Polar (11-22) n-GaN: The Impact of Terrace-Like Evolution toward the Enhancement of the Electrical Properties, Thin Solid Films, (2020) 138489.

[28] A.-Z. Omar, A. Shuhaimi, A.H.A. Makinudin, M.I.A. Khudus, A. Supangat, Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire, Materials Science in Semiconductor Processing, 86 (2018) 1-7.

[29] A. Anuar, A.H.A. Makinudin, O. Al-Zuhairi, A.S.A. Bakar, A. Supangat, Crystal quality and surface structure tuning of semi-polar (11–22) GaN on m-plane sapphire via in-situ multiple ammonia treatment, Thin Solid Films, 697 (2020) 137817.

[30] A.H. Ahmad Makinudin, A.-Z. Omar, A. Anuar, A.S.A. Bakar, S.P. DenBaars, A. Supangat, Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template, Crystal Growth & Design, (2019).

[31] S. Xu, J. Zhang, Y. Cao, X. Zhou, J. Xue, Z. Lin, J. Ma, F. Bao, Y. Hao, Improvements in (112̅2) semipolar GaN crystal quality by graded superlattices, Thin Solid Films, 520 (2012) 1909-1912.

 

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