To date, considerable research has been devoted to semipolar (11-22) III-N based-light-emitting diodes due to the high demand for the future generation of high indium adsorption materials. However, higher indium content can generate stacking fault defects and partial dislocation that deteriorate the crystal, morphological, and optical quality. This study describes the effect of indium flux and two-dimensional nanoscale strain periodic alternating superlattices on the surface evolution during the growth of semi-polar (11-22) InGaN light-emitting diodes. Semi-polar (11-22) light-emitting diodes were grown on different templates with and without AlN/GaN strain periodic alternating superlattices. A direct correlation between the surface evolution, crystal quality, and optical properties was demonstrated, suggesting higher indium adsorption with increased crystallinity. Moderate indium flux induced lower surface undulation with intensified photoluminescence emission in the green range. Subs.....

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The original version of this Article contained an error in Affiliation 2, which was incorrectly given as ‘Nanotechnology Research Centre, Department of Physics, Faculty of Science, University Pendidikan Sultan Idris, 35900, Tanjung Malim, Malaysia’. The correct affiliation is listed below: Nanotechnology Research Centre, Department of Physics, Faculty of Science and Mathematics, Universiti Pendidikan Sultan Idris, 35900 Tanjong Malim, Perak, Malaysia The original Article has been corrected...

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The use of organic materials has become an increasingly important issue in sensing devices in recent times. Phthalocyanine is among the most promising materials in this undertaking. Zinc phthalocyanine (ZnPc) based microporous device was fabricated and its capacitance was utilized as the sensing mechanism for a humidity sensor. The effect of the electrode gap of the device on the electrical properties was investigated along with the correlation between the device's performances and the morphology of the sensing film. Using the solution-processed spin coating method, the capacitive type humidity sensor devices have been fabricated in a planar geometry of Al/ZnPc/Al with the presence of a microporous template. The size of electrode gaps measured with a surface profiler was 53.00 ± 0.06 μm, 119.00 ± 0.03 μm and 286.00 ± 0.01 μm. The surface morphology was characterized by using transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM) and X-ray phot.....

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The authors regret to inform you that there was a mistake with the code of the grant the was acknowledge in the acknowledgement. We would like to kindly ask you to amend the grant code from (IIPS/IRQ/GRT/09) to (2020-0295-103-11) as it was unintentionally occurred. Thus, the new grant code is: Universiti Pendidikan Sultan Idris, Malaysia under grant No. 2020-0295-103-11. The authors state that this does not change the scientific results or conclusions of the article in any way. The authors would like to apologise for any inconvenience caused. DOI of original article: https://doi.org/10.1016/j.mtcomm.2021.102441. ? 2021 Elsevier Ltd..

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Semi-polar (11-22) n-type gallium nitride thin films with various disilane doping levels were deposited via metal-organic chemical vapor deposition. The impact of the dissimilar disilane doping levels on the crystal, morphological, strain, and electrical properties was extensively studied. An X-ray rocking curve analysis demonstrated an improved crystal quality with enhanced terrace-like features using 15 standard cubic centimeters per minute of disilane doping. A closely packed step terrace-like feature was exhibited, reducing the density of arrowhead-like features. This facilitated a smoother surface with a root mean square surface roughness of 5.7 nm. Raman spectroscopy revealed that using an intermediate disilane flux reduced the compressive strain. An electrical analysis also showed that a moderate disilane doping level improved the carrier concentration and mobility to to 1.3 × 1018 cm−3 and 99.3 cm2. V−1. s−1, respectively...

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To date, considerable research has been devoted to semipolar (11?22) III-N based-light-emitting diodes due to the high demand for the future generation of high indium adsorption materials. However, higher indium content can generate stacking fault defects and partial dislocation that deteriorate the crystal, morphological, and optical quality. This study describes the effect of indium flux and two-dimensional nanoscale strain periodic alternating superlattices on the surface evolution during the growth of semi-polar (11?22) InGaN light-emitting diodes. Semi-polar (11?22) light-emitting diodes were grown on different templates with and without AlN/GaN strain periodic alternating superlattices. A direct correlation between the surface evolution, crystal quality, and optical properties was demonstrated, suggesting higher indium adsorption with increased crystallinity. Moderate indium flux induced lower surface undulation with intensified photoluminescence emission in the green range. Subs.....

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A single-crystalline semi-polar gallium nitride (11-22) was grown on m-plane (10-10) sapphire substrate by metal organic chemical vapor deposition. Three-step approach was introduced to investigate the grain size evolution for semi-polar (11-22) GaN. Such approach was achieved due to the optimized gallium to ammonia ratio and temperature variations, which led to high quality (11-22) oriented gallium nitride epilayers. The full width at half maximum values along (-1-123) and (1-100) planes for the overgrowth temperature of 1080°C were found to be as low as 0.37° and 0.49°, respectively. This was an indication of the enhanced coalescence and reduction in root mean square roughness as seen by atomic force microscopy. Surface analysis via atomic force microscopy indicated the orientation towards semi-polar plane. Field emission scanning electron microscopy analysis further indicates that higher temperature of 1080°C during the deposition of the overgrowth promoted closely packed surfac.....

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