To date, considerable research has been devoted to semipolar (11-22) III-N based-light-emitting diodes due to the high demand for the future generation of high indium adsorption materials. However, higher indium content can generate stacking fault defects and partial dislocation that deteriorate the crystal, morphological, and optical quality. This study describes the effect of indium flux and two-dimensional nanoscale strain periodic alternating superlattices on the surface evolution during the growth of semi-polar (11-22) InGaN light-emitting diodes. Semi-polar (11-22) light-emitting diodes were grown on different templates with and without AlN/GaN strain periodic alternating superlattices. A direct correlation between the surface evolution, crystal quality, and optical properties was demonstrated, suggesting higher indium adsorption with increased crystallinity. Moderate indium flux induced lower surface undulation with intensified photoluminescence emission in the green range. Subs.....

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The original version of this Article contained an error in Affiliation 2, which was incorrectly given as ‘Nanotechnology Research Centre, Department of Physics, Faculty of Science, University Pendidikan Sultan Idris, 35900, Tanjung Malim, Malaysia’. The correct affiliation is listed below: Nanotechnology Research Centre, Department of Physics, Faculty of Science and Mathematics, Universiti Pendidikan Sultan Idris, 35900 Tanjong Malim, Perak, Malaysia The original Article has been corrected...

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